SiC MOSFET Comparison 2019: Physical Analysis, Technology and Physical Comparison, Manufacturing Process Flow, Cost and Price Analysis, Cost Comparison

DUBLIN, Aug. 30, 2019 /PRNewswire/ -- The "SiC MOSFET Comparison 2019" report has been added to ResearchAndMarkets.com's offering.

The forecast for the value of the SiC power semiconductor market is about $1.5B by 2023.

SiC devices are gaining the confidence of many customers and are penetrating various applications. This is confirmed by the promising market outlook for SiC devices, which will reach a compound annual growth rate (CAGR) of 31% for the period 2017-2023.

Nevertheless, the technical panorama of SiC devices is still varying, and every manufacturer has its own solutions to die design and packaging integration. This leads to strong competition, which will accelerate technical innovation and lower prices. Moreover, SiC business models are still very different. In the future, we will see a restructuring of the supply chain driven by the main cost factors.

Manufacturers propose different approaches for gate structure and device design, focused on SiC's intrinsic properties or seeking to overcome issues linked to them.

SiC-based MOSFET devices still have some technical and commercial challenges to face, despite the value they add. For example, both SiC wafer processing and supply constraints impact wafer price and make it the major cost-driver of a SiC device. Other challenges include wafer size transition from 4-inch to 6-inch and the complexity of some process steps, mainly epitaxy, which hinders SiC adoption on a large commercial scale.

In this report, the author presents an overview of the state of the art of SiC MOSFETs to highlight differences in design and manufacturing processes and their impact on device size and production cost.

22 SiC MOSFETs of voltages varying from 650V to 1700V from Cree/Wolfspeed, Rohm, STMicroelectronics, Littelfuse, and Infineon have been analyzed. The report provides detailed optical and SEM pictures from the device's packaging and structure at the microscopic level of transistor design, with a focus on the latter.

This report includes an estimated manufacturing cost of the MOSFET devices and analyzes their selling prices. It provides physical, technological and manufacturing cost comparisons between the analyzed MOSFETs. Moreover, it shows a complete analysis of the actual SiC components' market.

Key Topics Covered:

1. Overview/Introduction

• Executive Summary
• Reverse Costing Methodology
• Glossary

2. Technology and Market

3. Company Profile and Supply Chain

• Rohm
• STMicroelectronics
• Wolfspeed
• Littelfuse
• Infineon

4. Physical Analysis

• 650V MOSFETs
• Rohm
• STMicroelectronics
• 900V MOSFETs
• Wolfspeed
• 1000V MOSFETs
• Wolfspeed
• 1200V MOSFETs
• Wolfspeed
• Rhom
• STMicroelectronics
• Littelfuse
• Infineon
• 1700V MOSFETs
• Wolfspeed
• Littelfuse
• Infineon

5. Technology and Physical Comparison

6. MOSFETs Manufacturing Process Flow

• Supply Chains
• Wolfspeed
• Rohm
• STMicroelectronics
• Littelfuse
• Infineon

7. Cost and Price Analysis

• Yield Explanations and Hypotheses
• 650V MOSFETs
• 900V MOSFETs
• 1000V MOSFETs
• 1200V MOSFETs
• 1700V MOSFETs

8. Cost Comparison

For more information about this report visit https://www.researchandmarkets.com/r/3t2lov

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